|WEPLM60||Fast Sn-Ion Transport on Nb Surface for Generating NbxSn Thin Films and XPS Depth Profiling||interface, electron, cavity, SRF||727|
Funding: U.S. National Science Foundation under Award PHY-1549132, the Center for Bright Beams
In this work, we propose and demonstrate a fast and facile approach for NbxSn thin film deposition through the ion exchange reaction. By simply dipping a tin precursor on the Nb substrate surface, a ~600 nm thin film is generated due to the electronegativity differ-ence between Sn and Nb. Through X-ray photoelec-tron spectroscopy (XPS) depth profiling, the composi-tional information as a function of film thickness was obtained. Results showed a Sn layer on the film sur-face, Sn-rich and Nb-rich NbxSn layers as the majority of the film, and a ~60 nm Nb3Sn layer at the film/substrate interface. Quantitative analysis con-firmed stoichiometric Nb/Sn ratio for the Nb3Sn layer. This deposition method is demonstrated to be an alter-native choice for Nb3Sn film growth.
|DOI •||reference for this paper ※ https://doi.org/10.18429/JACoW-NAPAC2019-WEPLM60|
|About •||paper received ※ 05 September 2019 paper accepted ※ 15 September 2019 issue date ※ 08 October 2019|
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