Author: Solanki, P.S.
Paper Title Page
MOPLS01 Spectroscopic Correlations to Resistive Switching of Ion Beam Irradiated Films 160
SUPLH08   use link to see paper's listing under its alternate paper code  
  • K.N. Rathod, N.A. Shah, P.S. Solanki
    Saurashtra University, Rajkot, Gujarat, India
  • K. Asokan
    IUAC, New Delhi, India
  • K.H. Chae, J.P. Singh
    Korea Institute of Science and Technology, Advanced Analysis Center, Seoul, Republic of Korea
  Researchers concentrated on resistive random access memories (RRAMs) due to excellent scalability, high integration density, quick switching, etc*,**. Intrinsic physical phenomenon of RRAMs is resistive switching. In this work, ion beam irradiation was used as a tool to modify resistive switching of pulsed laser deposited (PLD) Y0.95Ca0.05MnO3/Si films. Ion irradiation induced optimal resistive switching with spectroscopic correlations has been attributed to oxygen vacancy gradient. Resistive switching ratio is estimated to be increased for the film irradiated with fluence 1×1011 ions/cm2 due to irradiation induced strain and oxygen vacancies verified by X’ray diffraction (XRD), Raman, atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and near-edge X-ray absorption fine structure (NEXAFS) measurements. Strain relaxation and oxygen vacancy annihilation have been realized for higher fluence (1×1012 and 1×1013 ions/cm2) owing to local annealing effect. Present study suggests that the films understudy can be considered as emerging candidates for RRAMs.
* X.J. Zhu et al., Front. Mater. Sci. 6 (2012) 183, 206.
** D.S. Jeong et al., Rep. Prog. Phys. 75 (2012) 076502:1,31.
poster icon Poster MOPLS01 [0.745 MB]  
DOI • reference for this paper ※  
About • paper received ※ 26 August 2019       paper accepted ※ 16 November 2020       issue date ※ 08 October 2019  
Export • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)