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RIS citation export for MOPLH17: Enhanced Robustness of GaAs-Based Photocathodes Activation by Cs, Sb, and O2

AU  - Bae, J.
AU  - Bazarov, I.V.
AU  - Cultrera, L.
AU  - Galdi, A.
AU  - Ikponmwen, F.
AU  - Maxson, J.M.
ED  - Yamazaki, Yoshishige
ED  - Raubenheimer, Tor
ED  - McCausey, Amy
ED  - Schaa, Volker RW
TI  - Enhanced Robustness of GaAs-Based Photocathodes Activation by Cs, Sb, and O2
J2  - Proc. of NAPAC2019, Lansing, MI, USA, 01-06 September 2019
CY  - Lansing, MI, USA
T2  - North American Particle Accelerator Conference
T3  - 4
LA  - english
AB  - Operational lifetime of GaAs photocathodes is the primary limit for applications as high current spin polarized electron sources in future nuclear physics facilities, such as Electron Ion Collider. Recently, ultrathin Cs₂Te on GaAs has shown a successful negative electron affinity (NEA) activation with an improved lifetime by a factor of 5 *. In this work, we report activation of GaAs with Cs, Sb and oxygen. Four different methods of introducing oxygen during the growth was investigated. Cs-Sb-O activated GaAs has shown up to a factor of 40 and 13 improvement in charge extraction lifetime and dark lifetime, respectively.
PB  - JACoW Publishing
CP  - Geneva, Switzerland
SP  - 210
EP  - 212
KW  - electron
KW  - cathode
KW  - polarization
KW  - vacuum
KW  - extraction
DA  - 2019/10
PY  - 2019
SN  - 2673-7000
SN  - 978-3-95450-223-3
DO  - doi:10.18429/JACoW-NAPAC2019-MOPLH17
UR  - http://jacow.org/napac2019/papers/moplh17.pdf
ER  -