|MOPLS01||Spectroscopic Correlations to Resistive Switching of Ion Beam Irradiated Films||160|
|SUPLH08||use link to see paper's listing under its alternate paper code|
Researchers concentrated on resistive random access memories (RRAMs) due to excellent scalability, high integration density, quick switching, etc*,**. Intrinsic physical phenomenon of RRAMs is resistive switching. In this work, ion beam irradiation was used as a tool to modify resistive switching of pulsed laser deposited (PLD) Y0.95Ca0.05MnO3/Si films. Ion irradiation induced optimal resistive switching with spectroscopic correlations has been attributed to oxygen vacancy gradient. Resistive switching ratio is estimated to be increased for the film irradiated with fluence 1×1011 ions/cm2 due to irradiation induced strain and oxygen vacancies verified by X’ray diffraction (XRD), Raman, atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and near-edge X-ray absorption fine structure (NEXAFS) measurements. Strain relaxation and oxygen vacancy annihilation have been realized for higher fluence (1×1012 and 1×1013 ions/cm2) owing to local annealing effect. Present study suggests that the films understudy can be considered as emerging candidates for RRAMs.
* X.J. Zhu et al., Front. Mater. Sci. 6 (2012) 183, 206.
** D.S. Jeong et al., Rep. Prog. Phys. 75 (2012) 076502:1,31.
|Poster MOPLS01 [0.745 MB]|
|DOI •||reference for this paper ※ https://doi.org/10.18429/JACoW-NAPAC2019-MOPLS01|
|About •||paper received ※ 26 August 2019 paper accepted ※ 16 November 2020 issue date ※ 08 October 2019|
|Export •||reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)|